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| R1W V3216R Series 32Mb superSRAM (2M wordx16bit) REJ03C0215-0100Z Rev.1.00 2004.4.13 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit superSRAMs are assembled in one package. The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[TSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features * Single 2.7-3.6V power supply * Small stand-by current:4A (3.0V, typ.) * Data retention supply voltage =2.0V * No clocks, No refresh * All inputs and outputs are TTL compatible. * Easy memory expansion by CS1#, CS2, LB# and UB# * Common Data I/O * Three-state outputs: OR-tie capability * OE# prevents data contention on the I/O bus * Process technology: 0.15um CMOS Rev.1.00 2004.4.13 page 1 of 16 R1W V3216R Series Ordering Information Type No. R1WV3216RSD-7S% R1WV3216RSD-8S% R1WV3216RBG-7S% R1WV3216RBG-8S% Access time 70 ns 85 ns 70 ns 7.5mmx8.5mm f-BGA 0.75mm pitch 48ball 85 ns % - Temperature version; see table below % R W I Temperature Range 0 ~ +70 C -20 ~ +85 C -40 ~ +85 C Package 350-mil 52-pin plastic - TSOP(II) (normal-bend type) (52PTG) Rev.1.00 2004.4.13 page 2 of 16 R1W V3216R Series Pin Arrangement 52-pin TSOP A15 A14 A13 A12 A11 A10 A9 A8 A19 CS1# WE# NC NC Vcc CS2 NC A20 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 A16 BYTE# UB# Vss LB# DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 NC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss NC A0 48-pin fBGA 1 A B C D E F G H LB# 2 OE# 3 A0 A3 A5 A17 Vss or NC 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CS1# 6 CS2 DQ0 DQ15 UB# DQ13 DQ14 DQ1 DQ2 Vss Vcc DQ10 DQ12 DQ3 Vcc Vss DQ5 DQ11 DQ4 DQ9 A19 A8 A14 A12 A9 DQ6 DQ8 WE# A11 DQ7 A18 A20 Pin Description Pin name A0 to A20 DQ 0 to DQ15 CS1# &CS2 WE# OE# LB# UB# Vcc Vss BYTE# NC Function Address input Data input/output Chip select Write enable Output enable Lower byte select Upper byte select Power supply Ground Byte (x8 mode) enable input Non connection Rev.1.00 2004.4.13 page 3 of 16 R1W V3216R Series Block Diagram SENSE Amp. DQ0 DATA SELECTOR OUTPUT BUFFER ADDRESS BUFFER A0 Memory Array DECODER SENSE Amp. A20 CS2 CS1# LB# UB# BYTE# WE# OE# OUTPUT BUFFER 1048576 Words x 16BITS OR 2097152 Words x 8BITS CLOCK GENERATOR DQ7 DQ8 DQ15 / A-1 DATA SELECTOR DATA INPUT BUFFER Vcc Vss 16Mb superSRAM #1 16Mb superSRAM #2 Note: BYTE# pin supported by only TSOP type. Rev.1.00 2004.4.13 page 4 of 16 DATA INPUT BUFFER x8/x16 SWITCHING CIRCUIT R1W V3216R Series Operating Table CS1# H X X L L L L L L L L L CS2 X L X H H H H H H H H H BYTE# X X H H H X H H H H L L LB# X X H L L X H H L L L L UB# X X H H H X L L L L L L WE# X X X L H H L H L H L H OE# X X X X L H X L X L X L DQ0-7 High-Z High-Z High-Z Din Dout High-Z High-Z High-Z Din Dout Din Dout DQ8-14 High-Z High-Z High-Z High-Z High-Z High-Z Din Dout Din Dout High-Z High-Z DQ15 High-Z High-Z High-Z High-Z High-Z High-Z Din Dout Din Dout A-1 A-1 Operation Stand by Stand by Stand by Write in lower byte Read from lower byte Output disable Write in upper byte Read from upper byte Write Read Write Read Note 1. H:VIH L:VIL X: VIH or VIL 2. BYTE# pin supported by only TSOP type. When apply BYTE# ="L" , please assign LB#=UB#="L". Absolute Maximum Ratings Parameter Power supply voltage relative to Vss Terminal voltage on any pin relation toVss Power dissipation Symbol Vcc VT PT R ver. Value -0.5 to +4.6 -0.5*1 to Vcc+0.3*2 0.7 0 to +70 -20 to +85 -40 to +85 -65 to +150 R ver. 0 to +70 -20 to +85 -40 to +85 Unit V V W C C C C C C C Operation temperature Topr W ver. I ver. Storage temperature Tstg Storage temperature range under bias Tbias W ver. I ver. Note 1: -2.0V in case of AC (Pulse width 30ns) 2:Maximum voltage is +4.6V Rev.1.00 2004.4.13 page 5 of 16 R1W V3216R Series Recommended Operating Conditions Parameter Supply voltage Input high voltage Input low voltage R ver. Ambient temperature range W ver. I ver. Ta Symbol Vcc Vss VIH VIL Min. 2.7 0 2.4 -0.2 0 -20 -40 Typ. 3.0 0 - Max. 3.6 0 Vcc+0.2 0.4 +70 +85 +85 Unit V V V V C C C Note 1 2 2 2 Note 1. -2.0V in case of AC (Pulse width 30ns) 2. Ambient temperature range depends on R/W/I-version. Please see table on page 2. DC Characteristics Parameter Input leakage current Output leakage current Symbol |ILI| |ILo| Min. - Typ.*1 - Max. 1 1 Unit A A Test conditions*2 Vin=Vss to Vcc CS1# =VIH or CS2=VIL or OE# = VIH or WE# =VIL or LB# =UB# =VIH,VI/O=Vss to Vcc Min. cycle, duty =100% I I/O = 0 mA, CS1# =VIL, CS2=VIH Others = VIH / VIL Cycle time = 1 s, I I/O = 0 mA, CS1# 0.2V, CS2 VCC-0.2V VIH VCC-0.2V , VIL 0.2V, Write & Read duty=100% respectively CS2=VIL ~+25C ~+40C ~+70C ~+85C V in 0V (1) 0VCS20.2V or (2) CS2Vcc-0.2V, CS1# Vcc-0.2V or (3)LB# =UB# Vcc-0.2V, CS2Vcc-0.2V, CS1# 0.2V Average value Icc1 Average operating current - 60 70 mA Icc2 Write - 20 25 mA Icc2 Read - 15 0.1 4 7 - 20 0.3 12 24 50 80 0.4 mA mA A A A A V V Standby current ISB Standby current ISB1 - Output hige voltage Output Low voltage VOH VOL 2.4 - IOH = -1mA IOL = 2mA Note 1. Typical parameter indicates the value for the center of distribution at 3.0V (Ta= 25C), and not 100% tested. 2. BYTE# pin supported by only TSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V Rev.1.00 2004.4.13 page 6 of 16 R1W V3216R Series Capacitance (Ta = +25C, f =1MHz) Parameter Input capacitance Input / output capacitance Symbol C in C I/O Min. - Typ. - Max. 20 20 Unit pF pF Test conditions V in = 0V V I/O = 0V Note 1 1 Note 1. This parameter is sampled and not 100% tested. AC Characteristics Test Conditions (Vcc=2.7~3.6V, Ta = 0~+70C / -20~+85C / -40~+85C *) * Input pulse levels: VIL= 0.4V,VIH=2.4V * Input rise and fall time : 5ns * Input and output timing reference levels : 1.4V * Output load : See figures (Including scope and jig) 1.4V RL=500 DQ CL=30pF Note: Temperature range depends on R/W/I-version. Please see table on page 2. Rev.1.00 2004.4.13 page 7 of 16 R1W V3216R Series Read Cycle Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change LB#,UB# access time Chip select to output in low-Z LB#,UB# enable to low-Z Output enable to output in low-Z Chip deselect to output in high-Z LB#,UB# disable to high-Z Output disable to output in high-Z Symbol R1WV3216R**-7S Min. Max. 70 10 10 5 5 0 0 0 0 70 70 70 35 70 25 25 25 25 R1WV3216R**-8S Min. Max. 85 10 10 5 5 0 0 0 0 85 85 85 45 85 30 30 30 30 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns 2,3 2,3 2,3 1,2,3 1,2,3 1,2,3 1,2,3 Notes tRC tAA tACS1 tACS2 tOE tOH tBA tCLZ tBLZ tOLZ tCHZ1 tCHZ2 tBHZ tOHZ Rev.1.00 2004.4.13 page 8 of 16 R1W V3216R Series Write Cycle Parameter Write cycle time Address valid to end of write Chip selection to end of write Write pulse width LB#,UB# valid to end of write Address setup time Write recovery time Data to write time overlap Data hold from write time Output active from end of write Output disable to output in high-Z Write to output in high-Z Symbol R1WV3216R**-7S Min. Max. 70 65 65 55 65 0 0 35 0 5 0 0 25 25 R1WV3216R**-8S Min. Max. 85 70 70 60 70 0 0 40 0 5 0 0 30 30 Unit ns ns ns ns ns ns ns ns ns ns ns ns 2 1,2 1,2 6 7 5 4 Notes tWC tAW tCW tWP tBW tAS tWR tDW tDH tOW tOHZ tWHZ Note 1. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. AT any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and form device to device. 4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#. A write begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB# going low or UB# going low . A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and LB# going high or UB# going high. tWP is measured from the beginning of write to the end of write. 5. tCW is measured from the later of CS1# going low or CS2 going high to end of write. 6. tAS is measured the address valid to the beginning of write. 7. tWR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle. Rev.1.00 2004.4.13 page 9 of 16 R1W V3216R Series Byte enable (supported by only 52-pin TSOP ) Parameter Byte setup time Byte recovery time Symbol R1WV3216R**-7S Min. Max. 5 5 R1WV3216R**-8S Min. Max. 5 5 Unit ms ms Notes tBS tBR BYTE# Timing Waveform CS2 CS1# tBS BYTE# tBR Rev.1.00 2004.4.13 page 10 of 16 R1W V3216R Series Timing Waveform Read Cycle A0~20 (Word Mode) tRC Valid address A-1~20 (Byte Mode) tAA tBA tOH LB#,UB# tBHZ CS1# tACS1 tCHZ1 CS2 tACS2 tCHZ2 tOE OE# WE# = "H" level DQ0~15 (Word Mode) tOLZ tCLZ tBLZ tOHZ Valid data DQ0~7 (Byte Mode) Rev.1.00 2004.4.13 page 11 of 16 R1W V3216R Series Write Cycle (1) (WE# Clock) tWC A0~20 (Word Mode) A-1~20 (Byte Mode) Valid address tBW tCW tCW tAW tAS tWP tWHZ tDW tWR tOW LB#,UB# CS1# CS2 WE# DQ0~15 (Word Mode) tDH DQ0~7 (Byte Mode) Valid data Rev.1.00 2004.4.13 page 12 of 16 R1W V3216R Series Write Cycle (2) (CS1# ,CS2 Clock, OE#=VIH) tWC A0~20 (Word Mode) A-1~20 (Byte Mode) Valid address tBW LB#,UB# CS1# tAS CS2 tCW tCW tWP tDW tWR WE# DQ0~15 (Word Mode) tDH DQ0~7 (Byte Mode) Valid data Rev.1.00 2004.4.13 page 13 of 16 R1W V3216R Series Write Cycle (3) ( LB#,UB#Clock, OE#=VIH) tWC A0~20 (Word Mode) A-1~20 (Byte Mode) Valid address tAS tBW tWR LB#,UB# CS1# tCW tCW CS2 WE# tWP tDW tDH DQ0~15 (Word Mode) DQ0~7 (Byte Mode) Valid data Rev.1.00 2004.4.13 page 14 of 16 R1W V3216R Series Data Retention Characteristics Parameter Symbol MIn. Typ.*1 Max. Unit Test conditions*2,3 V in 0V (1) 0V CS2 0.2V or (2) CS2 Vcc-0.2V, CS1# Vcc-0.2V or (3) LB# =UB# Vcc-0.2V, CS2 Vcc-0.2V, CS1# 0.2V Vcc for data retention VDR 2.0 - 3.6 V Data retention current 4 7 - 12 24 50 80 - A A A A ns ~+25C Vcc=3.0V,Vin0V ~+40C (2) CS2 Vcc-0.2V, ~+70C ~+85C (1) 0V CS2 0.2V or CS1# Vcc-0.2V or (3) LB# =UB# Vcc-0.2V, CS2 Vcc-0.2V, CS1# 0.2V Average value IccDR - Chip deselect to data retention time Operation recovery time tCDR tR 0 5 See retention waveform ms Note 1.Typical parameter of IccDR indicates the value for the center of distribution at Vcc=3.0V and not 100% tested. 2. BYTE# pin supported by TSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V 3. Also CS2 controls address buffer, WE# buffer ,CS1# buffer ,OE# buffer ,LB# ,UB# buffer and Din buffer .If CS2 controls data retention mode,Vin levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance state. If CS1# controls data retention mode, CS2 must be CS2 Vcc-0.2V or 0V CS2 0.2V. The other input levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance state. Data Retention timing Waveform (1) (LB#,UB# Controlled) Vcc tCDR 2.4V LB# UB# 2.70V tR 2.4V LB# =UB# Vcc-0.2V Data Retention timing Waveform (2) (CS1# Controlled) Vcc tCDR 2.4V CS1# 2.70V tR 2.4V CS1# Vcc-0.2V Data Retention timing Waveform (3) (CS2 Controlled) Vcc CS2 tCDR 0.2V 2.70V tR 0.2V 0V CS2 0.2V Rev.1.00 2004.4.13 page 15 of 16 R1W V3216R Series Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. http://www.renesas.com Copyright (c) 2004. Renesas Technology Corporation, All rights reserved. Printed in Japan. Rev.1.00 2004.4.13 page 16 of 16 |
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